| 发明名称 |
Semiconductor device having zener diodes with temperature stability between base and collector regions |
| 摘要 |
A plurality of Zener diodes are connected between two electrodes of a transistor as the protector of the transistor to obtain a predetermined breakdown voltage. Each Zener diode has a breakdown of 5 V whose temperature coefficient is substantially zero.
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| 申请公布号 |
US5545914(A) |
申请公布日期 |
1996.08.13 |
| 申请号 |
US19940324611 |
申请日期 |
1994.10.18 |
| 申请人 |
ROHM CO., LTD |
发明人 |
KUMANO, HIROSHI |
| 分类号 |
H01L21/331;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L27/07;H01L29/73;H01L29/732;H01L29/78;H01L29/866;(IPC1-7):H01L29/732 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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