Verfahren zur Herstellung einer Halbleitervorrichtung mit Lotanschlussdrähten aus unterschiedlichen Materialien

摘要

Disclosed is a semiconductor device comprising a semiconductor integrated chip (11) having at least a power processing circuit (12b) in which larger current flows and a signal processing circuit (12a) in which smaller current flows each having bonding pads (15 and 16), a package having leadframes (14 and 17) on which the semiconductor integrated chip (11) is mounted, and a plurality of bonding wires (15 and 16) with different materials through which the bonding pads (13a and 13b) are joined to the leadframes (14 and 17).