发明名称 INTEGRAL CIRCUIT AND METHOD FOR ITS MANUFACTURING
摘要 FIELD: electronic devices. SUBSTANCE: device has thin dielectric plate to which semiconductor crystal and terminals are connected. Said semiconductor crystal has contact points, is covered by sealing dielectric cover and is connected to dielectric plate by its front side. Crystal also has recesses which provide access to contact points which serve as terminals. EFFECT: increased functional capabilities.
申请公布号 RU94030195(A) 申请公布日期 1996.06.27
申请号 RU19940030195 申请日期 1994.08.11
申请人 SMOLIGOVETS A.A.;BUGAETS E.S. 发明人 BUGAETS E.S.
分类号 H05K1/00;H01L21/78;H05K3/00 主分类号 H05K1/00
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