| 摘要 |
The compound semiconductor is etched by the etching solution to which is added 9-11 mole (NH4)2Sx, the acidic mixture of NH4OH, H2O2 and H1O in the ratio of 10:0.5:400, or alkaline etching solution, of H3PO4, H2O2 and H1O in the ratio of 1:1:400, and regulating pH. The compound semiconducor is manufactured by the process of ethching, forming sulfur protection film and removing the sulfur protection film by heat treating or keeping semiconductor for 4-6hrs under 10-8-10-7torr vaccum.
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