发明名称 |
Electronic device with a spin-on glass dielectric layer |
摘要 |
There is provided electronic devices with dielectric layers obtained from boron-oxide doped, spin-on glass formulations which form glassy layers with high oxygen resistance. Suitable electronic devices include integrated circuits. With high oxygen resistance, the glassy layer formed maintains its integrity in subsequent processing. Also provided is a method for preparing boron-oxide doped, spin-on glass formulations with a high carbon content having a silane adhesion promoter and boron-dopant incorporated therein.
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申请公布号 |
US5527872(A) |
申请公布日期 |
1996.06.18 |
申请号 |
US19940214477 |
申请日期 |
1994.03.17 |
申请人 |
AT&T GLOBAL INFORMATION SOLUTIONS COMPANY;HYUNDAI ELECTRONICS AMERICA;SYMBIOS LOGIC INC. |
发明人 |
ALLMAN, DERRYL D. J. |
分类号 |
G03F1/08;G03F7/09;H01L21/027;H01L21/312;H01L23/532;(IPC1-7):C08G77/08 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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