| 摘要 |
PURPOSE: To obtain a resist pattern of good shape by which a high resolution can be obtained and having a wide focal depth. CONSTITUTION: The negative resist, wherein a substance generated by receiving radiation is chemically changed by baking and made sparingly soluble in a developer, is applied on the surface of a substrate 1 by spin coating and prebaked on a hot plate 3 to form a resist layer 2. The entire surface of the resist layer is irradiated with an excimer laser beam 5 through a translucent reticle 4 having 10% transmissivity, and then the substrate 1 is baked on the hot plate 3. The surface of the resist layer 2 is selectively irradiated with the excimer laser beam 5 through a reticle 7, on which a desired pattern is formed, to form a picture divided into an exposed region 6a and an unexposed region 6b in the resist layer 2. The substrate is then baked on the hot plate 3. The picture is developed with a developer to obtain a resist pattern 8. |
