MANUFACTURE OF P-TYPE GAN SEMICONDUCTOR

摘要

PURPOSE: To provide a method of manufacturing p-type GaN semiconductor having a low resistance available for a double hetero-junction of light emitting diode by the MOVPE growth. CONSTITUTION: A GaN semiconductor doped with Mg, a p-type impurity, is deposited by the chemical vapor deposition method using ammonia as nitrogen source. The cooling atmosphere is then switched from ammonia to hydrogen or nitrogen mixture in a temp. range of 400 deg.C or more at cooling. According to this method, this switching of the atmosphere avoids feeding hydrogen atoms fed from ammonia whereby the hydrogen passivation is not caused and hence a low-resistance p-type GaN semiconductor is obtained.