PRODUCTION OF SEMI-INSULATING INDIUM PHOSPHIDE SINGLE CRYSTAL

摘要

PURPOSE: To provide a method for producing a semi-insulating InP single crystal by which the InP single crystal having a high resistivity and mobility can stably be obtained. CONSTITUTION: The first heat-treating step for heat-treating an InP single crystal having 0.05 ppm wt. total concentration of any one or more of contained Fe, Co or Cr present as remaining impurities without intentionally adding impurities is carried out at a temperature within the range of 900-1020 deg.C in an atmosphere under a phosphorus vapor pressure exceeding 6kg/cm<2> and the second heat-treating step for heat-treating the InP single crystal is performed at a temperature within the range of 400-640 deg.C in an atmosphere under the phosphorus vapor pressure of the dissociation pressure or above of the InP single crystal. Thereby, the InP single crystal having a resistivity as high as >=10<6>Ω.cm and a mobility exceeding 3000cm<2> /V.sec can stably be produced in good yield.