| 摘要 |
A method for planarizing the surface of a layer in a semiconductor device includes forming conductor regions 24, 26, and 28 on a layer of the semiconductor device; forming first insulator regions 30, 32, and 34 in gaps between the conductor regions 24, 26, and 28; and forming an insulator layer 40 over the first insulator regions 30, 32, and 34, and over the conductor regions 24, 26, and 28 such that a surface of the insulator layer 40 will be substantially planar.
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