| 摘要 |
PURPOSE: To obtain a sapphire single-crystal substrate with a ultra-flat surface which is suited for creating a high-performance semiconductor bus by selecting heat treatment conditions according to a crystal surface. CONSTITUTION: When performing heat treatment of a sapphire single-crystal substrate by heating it at a temperature exceeding 900 deg.C in normal-pressure atmosphere, atom step height and terrace width on the sapphire substrate surface are controlled by selecting heating time and temperature corresponding surface orientation, thus obtaining a substrate surface which is extremely flat, consists of only a terrace surface with virtually identical crystal orientation, and has a linear and regular step site. |
