发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD
摘要 PURPOSE: To decrease the impedance of a metal wire with a simple process and to reduce packaging cost by providing a metal wire which is bonded to both a metal spherical body laid out on a metal rib and a metal pad. CONSTITUTION: A metal spherical body 14 is bonded to a metal rib 16 and at the same time the upper portion of the metal spherical body 14 and source electrode pads 18a and 18b are bonded by a short gold wire 13. The height dimension of the metal spherical body 14 is formed to be equal to the thickness of a semiconductor device 15. In terms of the manufacturing method, first the metal spherical body 14 is formed, the metal spherical body 14 is pressed against the metal rib 16 by a capillary 31 for first bonding. Also, at this time, the gold wire 13 is cut at the head part of the metal spherical body 14. Then, the gold wire 13 is pressed against the head part of the metal spherical body 14 and a source electrode pad 18b of the semiconductor device 15 with a wedge tool 32 which is a wire bonding tool of a wedge bonder for performing a second bonding.
申请公布号 JPH0883817(A) 申请公布日期 1996.03.26
申请号 JP19940216137 申请日期 1994.09.09
申请人 MITSUBISHI MATERIALS CORP 发明人 YADOKORO HIROAKI;NOSE TSUNETARO
分类号 H01L21/60;H01L21/822;H01L27/04 主分类号 H01L21/60
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