| 摘要 |
<p>PURPOSE: To obtain an output voltage approximately twice as much as power supply voltage by raising a gate potential of a N transistor (TR) more than a power supply potential for a prescribed time from immediately after an input signal rises. CONSTITUTION: When potential of an input terminal IN is raised, a NTR-M16 is turned off through an inverter IV11, and potential of a node 16 is raised through a NTR-M11. On the other hand, a PTM-M12 is turned off. After that, a gate potential of the NTR-M11 is boosted more than power supply voltage VDD by accumulated charges of a capacitor C12 until a PTR-M13 is turned on after a delay time decided by inverters IV11-IV13 and a capacitor C11, threshold voltage is not lowered and potential of a node N16 is made twice as much as the power supply voltage VDD, output voltage almost twice as much as the power supply voltage can be obtained using a low voltage power supply.</p> |
