发明名称 |
MES field effect transistor formed in a diamond layer |
摘要 |
<p>A field effect transistor in accordance with the present invention comprises a buffer layer made of a highly resistant diamond on a substrate; an active layer which is made of a conductive diamond on the buffer layer and has such a dopant concentration that conduction of carriers is metallically dominated thereby and such a thickness that dopant distribution is two-dimensionally aligned thereby; a cap layer made of a highly resistant diamond on the active layer; a gate electrode layer formed on the cap layer so as to make Schottky contact therewith; and a source electrode layer and a drain electrode layer which make ohmic contact with a laminate structure of said buffer, active and cap layers. Namely, the active layer is formed as a so-called delta -dope layer or pulse-dope layer doped with a conductive dopant, while being held between both highly resistant buffer and cap layers. Accordingly, even when the dopant concentration in the conductive diamond layer is increased, a high gain, as an excellent controllability and an excellent temperature-stability in operation characteristics can be obtained. <IMAGE></p> |
申请公布号 |
EP0702413(A2) |
申请公布日期 |
1996.03.20 |
申请号 |
EP19950114492 |
申请日期 |
1995.09.14 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD |
发明人 |
SHIOMI, HIROMU;NISHIBAYASHI, YOSHIKI;SHIKATA, SHIN-ICHI |
分类号 |
H05H1/46;H01L21/31;H01L21/338;H01L29/10;H01L29/16;H01L29/80;H01L29/812;(IPC1-7):H01L29/812 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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