In a plasma or RIE etching tool using a uniquely designed annulus around a wafer supporting pedestal, it has been found that the introduction of one or more gases in the region immediately adjacent the annulus controls the amount of etching of features in that region in the surface of the wafer mounted on the pedestal. By so controlling the amount of gas in this region, the slope of the walls of the etched features can be also controlled.
申请公布号
US5498313(A)
申请公布日期
1996.03.12
申请号
US19930147653
申请日期
1993.11.03
申请人
INTERNATIONAL BUSINESS MACHINES CORP.
发明人
BAILEY, MICHAEL E.;DANG, DINH;MICHAEL, JAMES G.;NEARY, TIMOTHY E.;PASTEL, PAUL W.;TOUSLEY, SYLVIA R. R.;WINSLOW, ARTHUR C.