| 摘要 |
<p>Disclosed is a SOI-type semiconductor device having a monocrystalline silicon substrate, an insulator thin-film formed on the substrate, a monocrystalline silicon thin-film formed on the insulator thin-film, and a gate electrode formed on the monocrystalline silicon thin-film with inserting a gate insulating film therebetween, wherein the semiconductor device forming a thin-film transistor by the monocrystalline silicon thin-film including source, drain and channel regions, and the gate electrode serving as a control electrode, characterized in that the insulator thin-film has an aperture just below the gate electrode, and the monocrystalline silicon substrate has a protrusion extending into the aperture. The method for making the SOI-type semiconductor device is also disclosed. <MATH></p> |
