| 摘要 |
<p>PURPOSE:To make bumps uniform in height by a method wherein solder is prevented frojn spreading at wet back. CONSTITUTION:A first process in which a plating power supplying current film 13 and a solder barrier Cr film 14 are successively sputtered on the pad electrode of a semiconductor device, a second process in which a solder barrier metal Cu layer 16 is formed on the pad electrode, a third process in which a mushroom-shaped solder plating 17 is formed on the pad electrode, and a fourth process in which the solder barrier Cr film 14 and the plating power supplying current film 13 are removed after a ball-shaped solder bump 18 is formed by melting the mushroom-shaped solder plating 17 are provided.</p> |
