摘要 |
The modulator includes quantum well layer(s) having a non-uniform composition which provides ,across the thickness of the layer, a non-uniform value of lattice constant to produce a strain profile in the modulator which gives matching E1-HH1 and E1-LH1 Stark shifts for at least one polarity of applied electric field form 0 to 100 kV/cm. The quantum well layer(s) has/have a substructure of at least two substructure layers of different lattice constant provided, in the direction normal to the layers, hole wave functions for heavy-holes, HH1, and for light holds, LH1, which are skewed w.r.t. the mid-plane of the quantum well layer. The skew in one direction for heavy holes is compensated by the skew in the opposite direction for light holes.
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申请人 |
NORTHERN TELECOM LTD., MONTREAL, QUEBEC, CA |
发明人 |
GREEN, PETER DAVID, HARLOW, ESSEX, GB;SILVER, MARK, DR., GUILDFORD, SURREY, GB;ADAMS, ALFRED RODNEY, PROF., GUILDFORD, SURREY, GB |