| 摘要 |
A process for preparing a superconducting thin film of K2NiF4 -type oxides such as [La, Ba ]2CuO4, or [La, Sr ]2CuO having higher transition temperature of superconductivity which can be used for Josephson Junctions devices or the like by sputtering technique. The process of the present invention is characterized in that the target used in the sputtering technique is composed of a mixture of compounds which .contain at least La, one element M selected from a group of Ia, IIa and IIIa elements of the Periodic Table, and Cu. The compounds may be oxides, carbonates, nitrate or sulfates of La, said element M, and Cu. Said mixture which is used as the target is preferably sintered into a form of a sintered body. The substrate on which the thin film is deposited is preferably heated at a temperature between 100 and 1,200 DEG C. during sputtering and the deposited thin film is preferably heat-treated at a temperature between 600 DEG and 1,200 DEG C. after the sputtering is completed.
|
