Corrosion resistant metal connection pattern prodn.

摘要

Connection pattern is formed on a substrate by: (a) forming a connection layer on a substrate, selectively etching the layer using a halogen-contg. gas to form a pattern and then UV irradiating the pattern in a reducing species-contg. atmos. or in a fluorine-contg. gas; or (b) forming a connection layer on a substrate, applying a resist onto the layer, selectively etching the layer with a halogen-contg. gas using the resist as mask, forming a halogen-contg. protective layer on the sidewalls of the connection pattern and the resist, asking to remove the resist and then UV irradiating the pattern in a reducing species-contg. atmos. or in a fluorine contg. gas; or (c) carrying out process (b) but replacing the UV radiation step by a step of forming a carbide layer for covering the pattern surface. Also claimed are (i) appts. for forming a connection pattern on a semiconductor substrate; and (ii) a semiconductor device with a carbide layer covering the surface of a connection pattern on a substrate.