Semiconductor memory device e.g. DRAM

摘要

The memory device includes a number of MOSFETs, a lower insulation layer (12) on a substrate (11), and several memory electrodes. Provided with the MOSFETs are several capacitors. The insulation layer is deposited over the MOSFETs, leaving contact holes (13) free to expose the electrodes of the MOSFETs. The memory electrodes each have a conducting layer pattern (14') and a separator (17). The insulation layer overlaps the contact hole and the electrode providing electrical contact.