| 摘要 |
<p>PURPOSE:To provide a reflection type phase shift mask which is capable of overcoming the problem of deterioration by photoirradiation possessed by a transmission type mask and realizing a phase difference 180 deg. of reflected light on the surface of a substrate and in phase shift parts. CONSTITUTION:This reflection type phase shift mask to be used for exposure, of patterns by forming the reflected light having the phase difference by reflection of light includes the substrate 12 for reflecting exposing light, phase shift films 11 formed in part on the substrate 12, a light transmission medium 10 formed on the substrate 12 and the phase shift film 11 and antireflection film 13 formed on this light transmission medium 10. The phase difference between the light reflected by the substrate 12 and the light reflected by the phase shift films 11 is so set as to attain 180 deg.. In addition, the refractive indexes and film thicknesses of the respective parts are so set that the phase of the light reflected by the phase shift films 11 and the phase of the light transmitted through the phase shift films 11, reflected by the substrate 12 and emitted from the phase shift films 11 are equalized.</p> |
