| 摘要 |
<p>PURPOSE:To obtain an LCD panel of a high quality picture element having highly uniform TFT characteristics inside the picture element even when the pitch of the picture element becomes narrow by a method wherein the two-row componentor or more or two-column component or more of the semiconductor region of the circuit, connected to the picture element, is polycrystallized by one scanning of beam annealing. CONSTITUTION:When an active matrix indication element, in which a beam- anneal crystallized semiconductor is used, is manufactured, a semiconductor region, having two or more column components or two or more row components of the circuit connected to a picture element by a scanning of beam annealing, is polycrystallized. For example, an alpha-Si film is formed on a glass substrate by a plasma CVD method. The scanning interval of beam annealing is set at 80mum which is twice the picture element pitch (40mum) in column direction, and an annealing operation is conducted in the width of a beam annealing line 6 of 70,7m. Then, Si is patternized by conducting a photolithography process, and a silicon island 2 of two column components is formed on a beam annealing island 6.</p> |
