发明名称
摘要 In manufacturing an insulation substrate used in a semiconductor device, a metal plate (10) having relatively thick body portions (11a,11b,11c) and relatively thin linkage portions (12,13) is prepared. The body portions are spaced from each other and the linkage portions link up the respective body portions. The metal plate is fixed to a metal flat plate (1) through a resin layer (2). The linkage portions are then removed through selective etching. The structure thus obtained is cut into a plurality of unit structures, to thereby obtain an in insulation substrate having conductive circuit patterns thereon. <IMAGE>
申请公布号 JPH07105461(B2) 申请公布日期 1995.11.13
申请号 JP19900207271 申请日期 1990.08.03
申请人 发明人
分类号 H05K3/44;H01L21/48;H01L23/12;H01L23/14;H01L23/48;H01L23/495;H05K3/02 主分类号 H05K3/44
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