发明名称 |
Apparatus for generating raw material gas used in apparatus for growing thin film |
摘要 |
In an apparatus for forming a film of MOCVD, gas source MBE or the like, there is provided a gas supply pipe for supplying gas obtained by gasifying a liquid or solid organic metal raw material to a reaction chamber. A mechanism in which a pressure gauge is fitted in the vicinity of a gas generating source in the gas supply pipe and the gas supply quantity from the gas generating source is regulated based on an indicated value of the pressure gauge so as to suppress variation of the gas pressure is installed in the apparatus for forming a film. There is a heating system for heating the organic metal raw material or an ultrasonic vibrator for applying ultrasonic vibration to the organic metal raw material as the mechanism for regulating the gas supply quantity, and the gasified quantity of the organic metal raw material is varied by regulating the heating temperature of the heating system or by varying the output of the ultrasonic vibrator.
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申请公布号 |
US5460654(A) |
申请公布日期 |
1995.10.24 |
申请号 |
US19930084020 |
申请日期 |
1993.06.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
KIKKAWA, TOSHIHIDE;TANAKA, HITOSHI;OCHIMIZU, HIROSATO |
分类号 |
H01L21/205;C23C16/44;C23C16/448;C30B25/14;H01L21/31;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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