PROCESS TO PRODUCE DIAMOND FILMS

摘要

A plasma enhanced chemical transport (PECT) process for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 mu m/hr, the deposition being enhanced by a hydrogen plasma. The process is performed at 80 to 180 Torr and a current density of about 0.5 to 4.0 amp/cm<2> of substrate. The diamond film is deposited on a substrate located 0.4 to 1.0 cm from a carbon cathode. The invention further comprises undoped and doped diamond films produced by the process, the product having a well-faceted microcrystalline structure with an x-ray diffraction pattern and Raman spectra indicative of a predominantly diamond structure. The invention further comprises doped diamond films which function as n-type and p-type semiconductors. In addition to the well-faceted diamond coating, cauliflower and multiple-twinned faceted diamond film morphologies, as well as films of extremely low surface roughness, can also be formed.