| 摘要 |
PURPOSE:To provide a developing method which the width, etc., of lines formed on the surface of a semiconductor wafer can be made uniform. CONSTITUTION:A developing solution is supplied to a substrate 3 to be treated by scanning the spray of the solution from a nozzle 5 while the substrate 3 is rotated by means of a rotating mechanism 5. While the developing solution is supplied, a shutter 11 is opened and a treatment chamber 2 is exhausted to a first degree of vacuum of about 10-20mmH2O. Thereafter, the rotation of the substrate 3 and scanning of the spray of the solution are stopped and a photosensitive film of a photoresist, etc., formed on the surface of the substrate 3 is developed by using a paddle during a preset developing time of, for example, 30 seconds. During the developing process, the shutter 11 is closed and the degree of vacuum is set to a second volume at which desired uniformity can be obtained. After the development, succeeding processes are performed at the first degree of vacuum. |
