| 摘要 |
A semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, they been laminated. Around a mesa side surface, a round shape p<+> region is formed to have a width of several mu m by doping p<+> to below the field buffer layer, and then the cap layer is etched so that the p<+> region is not in contact with the cap layer. This makes a distance of several mu m between the inner surface of the p<+> region and the external surface of the cap layer. <IMAGE> |
