| 摘要 |
PURPOSE: To constitute the embedded interconnection of an integrated circuit by simultaneously irradiating an n-type region and a p-type region with protons by a dosage and energy selectively, increasing resistance only in the n-type region. CONSTITUTION: In a process, in which a semiconductor structure containing the n-type regions 16, 19 and p-type region 14 of Alx Ga1-x As (0<=x<=1) is formed, the n-type regions 16, 19 and the p-type region are irradiated simultaneously with protons by a dosage and energy, by which the resistance of only the n-type regions 16, 19 is increased selectively. A mask, to which a pattern is formed, is shaped onto the surface of the semiconductor structure at that time, and protons are applied at a dosage of approximately 10<14> /cm<2> or less through the opening of the mask. Consequently, the resistance-increased (n) regions 16, 19 mutually separate a plurality of electrical elements formed in the semiconductor structure, while the p-type region 14 forms conduction paths among a plurality of the electrical elements. Accordingly, the embedded interconnection of an integrated circuit can be constituted. |
