| 发明名称 |
TUNGSTEN FILM DEPOSISTING METHOD BY ION BEAM FOCUSING APPARATUS |
| 摘要 |
having a Ga ion beam current density in the range from 3555.6μA/cm2 to 8000μA/cm2; vacuum-evaporating tungsten from a vacuum evaporation source W(CO)6 at a vacuum-evaporation velocity from 30 to 35∦/sec.
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| 申请公布号 |
KR950010855(B1) |
申请公布日期 |
1995.09.25 |
| 申请号 |
KR19920019288 |
申请日期 |
1992.10.20 |
| 申请人 |
HYUNDAI ELECTRONIC INDUSTRY CO., LTD. |
发明人 |
KIM, HO - JUNG;KIM, JONG - TAE |
| 分类号 |
H01L21/285;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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