发明名称 |
Semimetal-semiconductor heterostructures and multilayers |
摘要 |
The present invention provides for the fabrication of single layer semimetal/semiconductor heterostructures and multilayer semimetal/semiconductor structures. Each semimetal/semiconductor layer fabricated in accordance with the present invention has compatible crystal symmetry across the heterojunction between a semimetal and a semiconductor. A single layer semimetal/semiconductor structure is fabricated by growing a rhombohedral semimetal in a [111] direction on a substrate material having a (111) orientation, and then growing a zincblende semiconductor in a [111] direction on the semimetal. A multilayer semimetal/semiconductor structure may be grown from the single layer semimetal/semiconductor structure by growing an additional rhombohedral semimetal layer in a [111] direction on the preceding semiconductor grown, then growing an additional zincblende semiconductor layer in a [111] direction on the additional semimetal layer, and then repeating this process as many times as desired. Each semimetal to be sandwiched between semiconductors in the multilayer semimetal/semiconductor structure may be grown thin enough that the semimetal is converted into a semiconductor.
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申请公布号 |
US5449561(A) |
申请公布日期 |
1995.09.12 |
申请号 |
US19920916050 |
申请日期 |
1992.07.17 |
申请人 |
UNIVERSITY OF HOUSTON |
发明人 |
GOLDING, TERRY D.;MILLER, JR., JOHN H. |
分类号 |
C30B25/00;C30B23/02;C30B25/02;H01L21/20;H01L21/203;H01L21/285;H01L29/205;H01L29/68;(IPC1-7):B32B15/04 |
主分类号 |
C30B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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