发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device capable of being electrically written and erased comprising a floating gate, wherein, a silicon nitride, silicon oxinitride, aluminum oxide, or silicon carbide film is incorporated between the drain region and the floating gate.
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申请公布号 |
US5449941(A) |
申请公布日期 |
1995.09.12 |
申请号 |
US19920966857 |
申请日期 |
1992.10.27 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;TAKEMURA, YASUHIKO |
分类号 |
H01L29/423;H01L29/788;(IPC1-7):H01L29/68;H01L27/02;H01L29/34 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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