Fabricating electrical contacts in semiconductor devices

摘要

A method of fabricating an electrical contact in a semiconductor device comprises providing on an underlying silicon substrate a reflowable interlevel dielectric material having a contact opening exposing a contact region of the silicon substrate. The silicon substrate and the interlevel dielectric material are heated by a rapid thermal anneal in an oxygen-containing atmosphere thereby to grow an oxide control layer in the contact region and to reflow the dielectric material. A layer of transition metal is deposited over the reflowed dielectric material and the control layer and at least part of the transition metal layer is converted into a metallurgic barrier.