| 摘要 |
PURPOSE: To provide a semiconductor memory device comprising a capacitor of large capacitance, relating to the improvement of capacitor space in a cylinder structure. CONSTITUTION: A cylindrical lower electrode 16 wherein a storage node of a charge storage capacitor is formed to either of source or drain region through an insulating layer 14 above a transfer transistor, and a cover-like upper part electrode 19 which is formed on the lower electrode 16 while connected to it, are provided. |
