| 摘要 |
PURPOSE:To reduce the memory area furthermore by insulating a word line from a bit line while self-aligning. CONSTITUTION:A gate insulating film 6.3 is deposited in a first region of first conductivity type on a semiconductor substrate, a word line 6.4 is formed thereon and a first insulating film 6.5 is deposited around the word line 6.4 by self- aligned technology. Impurities of second conductivity type are introduced into the first region to produce an impurity region 6.6 for forming source and drain and then a second insulating film 6.7 is deposited on the first region. Subsequently, the second insulating film 6.7 is removed from one impurity region 6.6 and a bit line 6.8 to be connected electrically therewith is formed thereon followed by formation of a third insulating film 6.9 around the bit line 6.8 by self-aligned technology. The second insulating film 6.7 is then removed from the other impurity region 6.6 and the lower electrode 6.11 of a storage capacity being connected electrically therewith is formed thereon. Furthermore, a capacitor insulating film 6.12 is deposited thereon and a plate electrode 6.13 is formed thereon. |
