| 摘要 |
PURPOSE: To provide a method for manufacturing a ferroelectric body thin film that can control the crystal structure of SrTiO3 or (Ba, Sr) TiO3 . CONSTITUTION: A silicon substrate 100 where Pt 102 is adhered is retained at approximately 300 degrees, then an amorphous film 104 of (Ba, Sr) TiO3 is adhered onto the substrate, and then the substrate is retained at a temperature of approximately 620 degrees for annealing in oxygen atmosphere. |
