| 摘要 |
<p>A non-volatile memory includes a floating gate transistor (e.g., Q15) capable of storing charge (representing a binary 1 or 0) on the floating gate for extended, although not indefinite, periods of time. To refresh any charge that leaks off the floating gate, refresh circuitry (e.g., Q17-Q19) is provided to restore the charge on the gate to its original logical state. This refresh circuitry may be activated on a periodic basis, for example, weekly or monthly, or on an aperiodic basis, such as at "power-up." Each of the transistors in the memory are preferably thin film, amorphous silicon, "N" type transistors, including the floating gate transistor. <IMAGE></p> |
