发明名称 OVERVOLTAGE LIMIT CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain an overvoltage limit circuit where the limit effect of an overvoltage can be obtained even if high-speed switching is performed and a surge current when limiting overvoltage is large. CONSTITUTION:An overvoltage limit circuit 11 when a self arc-extinguishing semiconductor device (for example, IGBT) which is serially connected to a main DC power supply 3 and an inductance (transformer) 2 for turning on or off the current through an inductance consists of a series circuit made of an avalanche diode 12 and a silicon surge absorber 13 which is serially connected to the anode. The avalanche diode of the series circuit is connected to a non-grounding main terminal (drain terminal) of a self arc-extinguishing type semiconductor device and a silicon surge absorber is connected to a control terminal (gate terminal).
申请公布号 JPH07170654(A) 申请公布日期 1995.07.04
申请号 JP19930312359 申请日期 1993.12.14
申请人 FUJI ELECTRIC CO LTD 发明人 IDE TETSUO
分类号 H02H9/04;H02H7/12;H02M7/537 主分类号 H02H9/04
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