发明名称 Semiconductor memory with power-on reset control of disabled rows
摘要 An integrated circuit memory having redundant rows, for replacing a row in a primary array having a defective memory cell, is disclosed. For each primary row that is to be replaced, a fuse is opened between the output of the row decoder and the word line for the replaced row. A power-on reset circuit is provided in the memory for determining if the power supply voltage has reached an adequate voltage; if not, a transistor connected to each word line is turned on, biasing the word line to a de-energizing voltage. This ensures that the word lines for replaced rows do not power up in an "on" state.
申请公布号 US5424986(A) 申请公布日期 1995.06.13
申请号 US19910811088 申请日期 1991.12.19
申请人 SGS-THOMSON MICROELECTRONICS, INC. 发明人 MCCLURE, DAVID C.
分类号 G11C11/413;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 主分类号 G11C11/413
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