| 摘要 |
The present invention provides a low-pressure CVD apparatus capable of forming a film with improved step coverage and which fills up contact holes without forming any seam therein. The low-pressure CVD apparatus comprises a CVD reaction chamber (6) provided with a source gas inlet (5), a susceptor (1) for supporting a wafer (2), and a gas distributing means (3) disposed between the source gas inlet (5) and a wafer (2) supported on the susceptor (1) to distribute a source gas uniformly over the surface of the wafer (2). The gas distributing means (3) is provided with a plurality of minute pores (16) serving as passages (10a) for the source gas and extending substantially perpendicularly to the surface of the wafer (2).
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