| 发明名称 |
Intermetallic compound semiconductor thin film |
| 摘要 |
An intermetallic compound semiconductor thin film comprises thin film made of the III-V group intermetallic compound InTlSb. Preferably, the thin film is grown by a vapor phase MOCVD method.
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| 申请公布号 |
US5421910(A) |
申请公布日期 |
1995.06.06 |
| 申请号 |
US19940195823 |
申请日期 |
1994.02.10 |
| 申请人 |
NORTHWESTERN UNIVERSITY |
发明人 |
RAZEGHI, MANIJEH |
| 分类号 |
H01L29/201;H01L31/0304;H01L31/18;(IPC1-7):H01L29/12 |
主分类号 |
H01L29/201 |
| 代理机构 |
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