发明名称 |
Method of producing a resistor in an integrated circuit |
摘要 |
The present method of forming a resistor as part of an integrated circuit includes a first masking step which blocks the resistor area of the integrated circuit from plasma etchant, with such plasma etchant meanwhile being used to define small line widths of, for example, metalization. Subsequent thereto, another layer of photoresist is applied to allow wet etching of the area of metalization above the resistor, meanwhile blocking such wet etchant from areas previously plasma etched.
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申请公布号 |
US5420063(A) |
申请公布日期 |
1995.05.30 |
申请号 |
US19940226129 |
申请日期 |
1994.04.11 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
MAGHSOUDNIA, PIROUZ;MOBERLY, LAWRENCE |
分类号 |
H01L21/3213;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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