| 摘要 |
<p>A low-power cathode can be obtained by arranging it on a substrate (1), preferably of silicon, which is entirely or partly removed at the location of the emissive structure (11) by means of, for example, anisotropic etching. A method of manufacture provides a layer of etch- stopping silicon nitride or highly doped silicon. Because of its low power, the cathode is particularly suitable for multi-beam applications. <IMAGE></p> |
