发明名称 ONE-ELECTRON TRANSISTOR
摘要 PURPOSE:To form a transistor utilizing an one-electron tunneling phenomenon generated in an ordinary temperature region, by controlling its tunneling current through the voltage change applied to its electrode part at an ordinary or nearly ordinary temperature while opposing fine probes to at least its one electrode part. CONSTITUTION:In an one-electron transistor, one of liquid crystal compounds is used as its configuration molecule. The alkyl chains of the liquid crystal compounds are represented by the chemical formula of 4'-n-alkyl-4- cyanobiphenyl, and the lengths of the alkyl chains are different from each other. Each one of these molecular compounds forms a smectic liquid crystal layer at a nearly ordinary temperature. As this liquid crystal molecule, 7CB (the number m of carbons of alkyl chain is seven) is disposed on the surface of graphite. The liquid crystal molecule is very useful with respect to the control of one-electron tunneling, by virtue of the formation of its orientation structure. When external electrodes are arranged at spaces of 5mm in the one-electron transistor and an effective bias current is applied to it, the transistor utilizing one-electron tunneling at a nearly ordinary temperature can be formed.
申请公布号 JPH07106549(A) 申请公布日期 1995.04.21
申请号 JP19940125421 申请日期 1994.06.07
申请人 RES DEV CORP OF JAPAN 发明人 NESHIRO HITOSHI;AONO MASAKAZU
分类号 G01B7/34;G01N23/225;G01Q60/10;H01L29/06;H01L29/66;H01L29/76;H01L29/80;H01L49/00;(IPC1-7):H01L29/66 主分类号 G01B7/34
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