| 摘要 |
PURPOSE:To improve stability in the clamp level of a MOS type semiconductor clamping circuit. CONSTITUTION:The MOS type semiconductor clamping circuit is provided with a semiconductor substrate to which substrate potential is impressed, a well 3 electrically separated from the substrate potential and MOS type transistors(TRs) 5a, 5b, 6 formed in the well 3. These TRs 5a, 5b, 6 are mutually connected in series, the gates of respective TRs 5a, 5b, 6 are connected to their drains and stable potential different from the substrate potential is impressed to the well 3. |
