发明名称 |
Process for fabricating a Josephson device |
摘要 |
A process for producing a Josephson device is disclosed, wherein a Josephson junction is formed over a recess step by oblique deposition and a protective layer of conducting material or semiconducting material is formed on the Josephson junction. The actual thickness of the Josephson junction is controlled to be smaller due to the proximity effect.
|
申请公布号 |
US5401530(A) |
申请公布日期 |
1995.03.28 |
申请号 |
US19940205357 |
申请日期 |
1994.03.03 |
申请人 |
OSAKA GAS COMPANY, LTD. |
发明人 |
TAMURA, ITSURO;FUJITA, SATOSHI;WADA, MASAO |
分类号 |
H01L39/02;(IPC1-7):H01L39/00 |
主分类号 |
H01L39/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|