SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A FET (40) is formed ona Si-substrate (1) producing storage cells. The transistor has a gate electrode (8) and interruption sites (9a,9b). The gate electrode is separated by a gate insulating film on the substrate (1). . Zones (9a,9b) are formed at a distance from each other by the gate electrode between them in the substrate (1). A polysilicon layer (3) i.e. an LT-molten cpd. is in electrical contact with the site (9a). The polysilicon layer (3) is formed in such a way that it extends over the separating oxide film (10). A specific switching circuit zone i.e. storage cells, is in the intermediate layer - insulating film (2) on which a wiring layer (4) of aluminium is connected to the polysilicon layer (3). The wiring layers (4) are covered by a protective film (6). A connecting part (L) which can be melted by replacing the redundant switching circuit and removed, is formed on the zones in the polysilicon layer (3). USE/ADVANTAGE - Semiconductor devices such as SRAMs and DRAMs can be produced, in which predetermined joint sections are uninterrupted and defective switching circuits blocks are replaced by replacement blocks of open-loop-formation type.