GROWING A NITROGEN DOPED EPITAXIAL II-VI COMPOUND LAYER ON A SINGLE CRYSTAL SUBSTRATE

摘要

The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelenght is at least above the bandgap energy of the compound at the growth temperature.