MIM TYPE NONLINEAR ELEMENT AND ITS PRODUCTION

摘要

PURPOSE:To substantially prevent a change in current value at the time of voltage impression by forming an insulating film which consists essentially of a tantalum oxide and containing elements to make an electrical conductivity higher than the electrical conductivity of a tantalum oxidized film and elements to make the electrical conductivity lower when oxidized. CONSTITUTION:The MIM type nonlinear element is formed at the intersected point of a scanning line 12 consisting of a first metallic film and a second metallic film 14. The scanning line 12 is the metallic film contg. respectively >=1 kinds of the elements to make the electrical conductivity higher than the electrical conductivity of the tantalum oxidized film and make the electrical conductivity lower when oxidized or contg. respectively >=1 kinds of the elements having quadrivalent or lower valency and the elements having hexad or higher valency. The metallic film 12 is then anodically oxidized, by which the metallic oxidized film 13 contg. the elements included in the metallic film 12 is formed. As a result, the current change at the time of impression of the voltage of the voltage-current characteristics is eliminated and the MIM type nonlinear element having the high steepness of the voltage-current characteristics is obtd.