| 摘要 |
PURPOSE:To make current injection into a semiconductor light emitting element uniform all over the element surface, and prevent the light from a light emitting layer from being shielded, by forming ridges on a light emitting surface, and forming an electrode on at least one side surface of the ridge. CONSTITUTION:An N-type clad layer 102, an active layer 103, a P-type clad layer 4, a contact layer 105, and a sacrifice layer 107 are formed in order on a substrate 101. Resist 108 is formed in a comb type, and ridges 109 are formed by eliminating the sacrifice layer 107 and the contact layer 105 in the parts where the resist is not present. P-type electrodes 106 composed of AuZn are formed on the ridge side surfaces and the sacrifice layer 107. In this case, evaporation is performed from the oblique direction. Hence the P-type electrodes 106 are not formed on light emitting surfaces 110 which become the shadows of adjacent ridges, but formed only on the one side surfaces of the ridges and on the upper parts of the sacrifice layer 107 of the ridge upper surfaces. Hence the electrodes can be formed only on the ridge side surfaces, and a current can be made to flow uniformly all over the element surface without obstructing the light generated from the active layers just under the electrodes. |
