| 摘要 |
The method for manufacturing the amorphous silicon transistor comprises forming a gate (2) on a part surface of a glass substrate (1), depositing an insulating layer having two layers structure consisting of strong dielectrics and one dielectrics including SiN or SiO2, and forming amorphous silicon layer (a-Si:H), n+ amorphous silicon layer (n-a-Si:H) and Al layer for source/drain electrode.
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